GaN Systems has introduced the GS61004B-EVBCD to evaluate the GS61004B enhancement mode high electron mobility transistor (E-HEMT), which is based on a gallium nitride (GaN) substrate. This board uses four transistors in conjunction with two high-speed GaN E-HEMT drivers. It generates low dead times to minimize crossover distortion in class-D applications.
The E-HEMT drivers provide switching transition speeds in the sub nano-second range for hard switching applications. The board operates at a maximum die temperature of +125ºC.