Ferroelectric Random Access Memory

Ferroelectric Random Access Memory

ROHM Semiconductor has released nonvolatile ferroelectric random access memory (FeRAM) developed in the ferroelectric process and silicon gate complementary metal oxide semiconductor (CMOS) technology. The MR44V100A FeRAM is accessed using two-wire serial interface (I2C bus) and the MR45V100A FeRAM using serial peripheral interface (SPI). These memory devices eliminate battery backup required to hold data as cells are nonvolatile.

The FeRAM memories offer no mechanisms of erasing and programming memory cells and blocks as those are used for electrically erasable and programmable read only memory (EEPROM).