Panasonic’s PGA26E07BA and PGA26E19BA X-GaN power transistors are 600V gallium nitride power devices manufactured using gate injection transistor (GiT) technology. The transistors deliver normally-Off operation with high-speed switching characteristics and zero recovery loss.
X-GaN is a compound of gallium (Ga) and nitrogen (N). It possesses high breakdown voltage and low conduction resistance characteristics that enable high-speed switching and miniaturization. Unlike conventional silicon (Si) transistors that require bigger chip areas to reduce on-resistance, smaller-sized X-GaN devices allow high-speed switching with relative ease.