GaN Half Bridge Power Stage

GaN Half Bridge Power Stage

Texas Instruments has launched the LMG5200 80V half bridge power stage that provides an integrated solution using enhancement-mode gallium nitride (GaN) FETs. The device consists of two 80V GaN FETs driven by one high-frequency GaN FET driver in a half-bridge configuration. GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance.

All the devices are mounted on a bond-wire free package platform with minimized package parasitic elements.