GaN RF Amplifier ICs

GaN RF Amplifier ICs

Analog Devices has released gallium nitride (GaN) broadband power amplifiers that deliver greater than 10W with up to 55% power added efficiency (PAE) and ±1.0dB typical gain flatness across a 0.01GHz to 2.8GHz bandwidth. The HMC8500 series devices provide a 41dBm high-saturated output power from a 28V at 100mA supply voltage. In addition, these amplifiers offer a 4.5dB noise figure and 10dB return loss.

The devices are suitable for pulsed and continuous wave applications that include wireless infrastructure, radars and public mobile radios.