GaN Transistors with Bottom-Side Cooled Configuration

GaN Transistors with Bottom-Side Cooled Configuration

GaN Systems has launched 650V gallium nitride (GaN) power transistors that are designed with very low junction-to-case thermal resistance for demanding high power applications. The GS66516B devices are offered in a low inductance, low thermal resistance proprietary GaNPX package with a bottom-side cooled configuration. These power transistors allow for high current, high voltage breakdown and high switching frequency.

Typical applications include on-board battery chargers, DC/DC converters, inverters, industrial motor drives, fast battery charging, solar and wind power.