Low Gate Charge, Low EMI 1200V IGBTs

Low Gate Charge, Low EMI 1200V IGBTs

Infineon Technologies’ 1200V TRENCHSTOP IGBT6 devices are designed to meet the requirements for high efficiency, low conduction losses, and low switching losses. These transistors feature low gate charge, low electro-magnetic interference (EMI), easy paralleling capability, high efficiency in hard switching, and resonant topologies. They are available in two product families – the low conduction loss optimized S6 series and the improved switching losses H6 series. Typical applications include industrial UPS, energy storage, three-level solar string inverters, and welding.