Low-Side RF MOSFET Gate Driver

Low-Side RF MOSFET Gate Driver

IXYS has introduced a 15A low-side RF MOSFET gate driver designed to drive MOSFETs in Class D and Class E high frequency RF applications. The dual complementary metal oxide semiconductor (CMOS), high speed, high current IXRFDSM607X2 driver can also be used for applications requiring ultra-fast rise and fall times or short minimum pulse widths.

The driver can source and sink 7A of peak current per driver, 15A when combined, while producing voltage rise and fall times of less than 5ns and minimum pulse widths of 8ns.