Power MOSFET with Ultra-Low Gate Charge

Power MOSFET with Ultra-Low Gate Charge

STMicroelectronics has introduced the STF10LN80K5 Power MOSFET that is designed using MDmesh K5 technology. This technology is based on proprietary vertical structure that reduces on-resistance and gate charge. The MOSFET has a built-in Zener diode that enhances the electrostatic discharge (ESD) performance of the device.

The Zener voltage eliminates the need for additional external components by facilitating cost-effective device integrity protection. This MOSFET is suitable for switching applications.