UnitedSiC’s SiC cascodes are 3rd-generation gate driver SiC devices that are a combination of high-performance SiC JFETs and cascode optimized MOSFETs. These devices are enhancement-mode power switches formed by a high-voltage SiC depletion-mode JFET and a low-voltage silicon MOSFET connected in series. They offer high performance for the intrinsic diode forward drop (VSD) and recovery charge (QRR). Available in 650V and 1.2kV versions, these devices come in TO-247-3L, TO-220-3L, and D²PAK-3L packages. Typical uses include EV charging, PV inverters, switch mode power supplies (SMPS), power factor correction modules, motor drives, and induction heating.